SSD diskur M.2 NVMe 250GB Samsung 970 EVO Plus

Samsung MZ-V7S250BW 970 EVO Plus 250 GB Solid State Drive
 
  • Accelerate into next-gen computing
  • Storage memory: Samsung V-NAND 3-bit MLC
  • 250GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • Encryption support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
 
Descriptions
Product Description: Samsung 970 EVO Plus MZ-V7S250BW - solid state drive - 250 GB - PCI Express 3.0 x4 (NVMe)
Type: Solid state drive - internal - TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller
Capacity: 250 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: Triple-level cell (TLC)
Form Factor: M.2 2280
Interface: PCI Express 3.0 x4 (NVMe)
Buffer Size: 512 MB
Features: TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Dimensions (WxDxH): 22.15 mm x 80.15 mm x 2.38 mm
Weight: 8 grams
Manufacturer Warranty: 5-year warranty

Technical description
General
Device Type: Solid state drive - internal
Capacity: 250 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: Triple-level cell (TLC)
Form Factor: M.2 2280
Interface: PCI Express 3.0 x4 (NVMe)
Buffer Size: 512 MB
Features: TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Performance
SSD Endurance: 150 TB
Internal Data Rate: 3500 MBps (read) / 2300 MBps (write)
4KB Random Read: 17000 IOPS
4KB Random Write: 60000 IOPS
Maximum 4KB Random Write: 550000 IOPS
Maximum 4KB Random Read: 250000 IOPS
Reliability
MTBF: 1,500,000 hours
Expansion & Connectivity
Interfaces: PCI Express 3.0 x4 (NVMe) - M.2 Card
Compatible Bay: M.2 2280
Power
Power Consumption: 5 Watt (average) ¦ 8 Watt (maximum) ¦ 30 mW (idle max)
Miscellaneous
Compliant Standards: IEEE 1667
Environmental Parameters
Min. Operating Temperature: 0 °C
Max. Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Framleiðandi: Samsung
Framl.númer: MZ-V7S250BW
Vörunúmer: 9660

Til á lager

Samsung 970 EVO Plus 256GB M.2 NVMe diskarnir bjóða upp á allt að 3500 MB/s leshraða og 2300 MB/s skrifhraða.
Samsung 970 EVO Plus eru að flestra mati toppurinn í SSD diskum í heiminum í dag. Mikill áreiðanleiki, NVM-Express samskipti, NAND Flash V-Nand 3-bit MLC, 600.000 IOPS og 5 ára ábyrgð í gegnum Samsung.


Frí heimsending
Verð: 15.990 kr

Samsung MZ-V7S250BW 970 EVO Plus 250 GB Solid State Drive
 
  • Accelerate into next-gen computing
  • Storage memory: Samsung V-NAND 3-bit MLC
  • 250GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • Encryption support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
 
Descriptions
Product Description: Samsung 970 EVO Plus MZ-V7S250BW - solid state drive - 250 GB - PCI Express 3.0 x4 (NVMe)
Type: Solid state drive - internal - TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller
Capacity: 250 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: Triple-level cell (TLC)
Form Factor: M.2 2280
Interface: PCI Express 3.0 x4 (NVMe)
Buffer Size: 512 MB
Features: TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Dimensions (WxDxH): 22.15 mm x 80.15 mm x 2.38 mm
Weight: 8 grams
Manufacturer Warranty: 5-year warranty

Technical description
General
Device Type: Solid state drive - internal
Capacity: 250 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: Triple-level cell (TLC)
Form Factor: M.2 2280
Interface: PCI Express 3.0 x4 (NVMe)
Buffer Size: 512 MB
Features: TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Performance
SSD Endurance: 150 TB
Internal Data Rate: 3500 MBps (read) / 2300 MBps (write)
4KB Random Read: 17000 IOPS
4KB Random Write: 60000 IOPS
Maximum 4KB Random Write: 550000 IOPS
Maximum 4KB Random Read: 250000 IOPS
Reliability
MTBF: 1,500,000 hours
Expansion & Connectivity
Interfaces: PCI Express 3.0 x4 (NVMe) - M.2 Card
Compatible Bay: M.2 2280
Power
Power Consumption: 5 Watt (average) ¦ 8 Watt (maximum) ¦ 30 mW (idle max)
Miscellaneous
Compliant Standards: IEEE 1667
Environmental Parameters
Min. Operating Temperature: 0 °C
Max. Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine