256 MB PC2700 333 MHz

DDR SDRAM 184ra pinna DIMM 32Mx64 DIMM uppbyggt sem 32Mx8 - Double Data Rate(DDR333)

Samsung M368L3223CTL er 32M bit x 64 Double Data Rate SDRAM háþróuð minniseining. Samsung M368L3223CTL er gerð úr átta CMOS 32M x 8 bit með 4 bönkum af Double Data Rate SDRAM í 66pinna TSOP-II(400mil) pakkningum, sett á 184ra pinna gler-epoxy efni. Fjórir 0.1uF aftengingarþéttar eru á prentrásinni samhliða hverri DDR SDRAM. M368L3223CTL er Dual In-line minniseiningar og gerð fyrir ísetningu í 184ra pinna sökkul.

Samhæfð hönnun gerir nákvæma riðastýringu mögulega með notkun kerfisklukkunnar. Inngangs- og útgangsgagnaflæðið stjórnast bæði af for- og bakkanti DQS. Breytt svið aðgerðatíðna sem eru forritanlegar, gerir mögulegt að sama tækið verði nýtilegt fyrir mismunandi bandbreiddir og að úr verði afkastamikil minniskerfisnotkun.

Product Information, M368L3223CTL

DDR SDRAM 184pin DIMM 32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8

SAMSUNG Double Data Rate(DDR333) Advantage:

The Samsung M368L3223CTL is 32M bit x 64 Double Data Rate SDRAM high density memory modules. The Samsung M368L3223CTL consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The M368L3223CTL is Dual In-line Memory Modules and inten-ded for mounting into 184pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

• Power supply : Vdd: 2.5V ?0.2V, Vddq: 2.5V ?0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and /CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1250 (mil), Double sided component